supertex inc. supertex inc . 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com tp2535 features low threshold (-2.4v max.) high input impedance low input capacitance (125pf max.) fast switching speeds low on-resistance free from secondary breakdown low input and output leakage applications logic level interfaces - ideal for ttl and cmos solid state relays battery operated systems photo voltaic drives analog switches general purpose line drivers telecom switches ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description this low threshold enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally- induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. p-channel enhancement mode vertical dmos fets absolute maximum ratings pin con?guration product marking ordering information device package option bv dss /bv dgs (v) r ds(on) (max) () v gs(th) (max) (v) i d(on) (min) (a) to-92 tp2535 TP2535N3-G -350 25 -2.4 -0.4 -g indicates package is rohs compliant (green) parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55c to +150c soldering temperature* +300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. * distance of 1.6mm from case for 10 seconds. ga te source drain to-92 (n3) yy = year sealed ww = week sealed = green packaging s i t p 2 5 3 5 y y w w to-92 (n3) package may or may not include the following marks: si or
2 tp2535 supertex inc . 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (a) power dissipation @ t a = 25 o c (w) jc o c/w j a o c/w i dr ? (ma) i drm (a) to-92 -86 -0.6 0.74 125 170 -86 -0.6 ? i d (continuous) is limited by max rated t j . switching waveforms and test circuit 90% 10% 90% 90% 10% 10% puls e generator v dd r l outpu t d.u.t . t (on) t d(on ) t (off) t d(off) t f t r inpu t input output 0v vd d r ge n 0v -10v sym parameter min typ max units conditions electrical characteristics (t a = 25c unless otherwise speci?ed) bv dss drain-to-source breakdown voltage -350 - - v v gs = 0v, i d = -2.0ma v gs(th) gate threshold voltage -1.0 - -2.4 v v gs = v ds , i d = -1.0ma ?v gs(th) change in v gs(th) with temperature - - 4.8 mv/ o c v gs = v ds , i d = -1.0ma i gss gate body leakage - - -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - -10 a v gs = 0v, v ds = max rating - -1.0 ma v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current -0.2 -0.3 - a v gs = -4.5v, v ds = -25v -0.4 -1.1 - v gs = -10v, v ds = -25v r ds(on) static drain-to-source on-state resistance - 20 30 v gs = -4.5v, i d = -100ma 19 25 v gs = -10v, i d = -100ma ?r ds(on) change in r ds(on) with temperature - - 0.75 %/ o c v gs = -10v, i d = -100ma g fs forward transconductance 100 175 - mmho v ds = -25v, i d = -100ma c iss input capacitance - 60 125 pf v gs = 0v, v ds = -25v, f = 1.0 mhz c oss common source output capacitance - 20 70 c rss reverse transfer capacitance - 10 25 t d(on) turn-on delay time - - 10 ns v dd = -25v, i d = -0.4a, r gen = 25? t r rise time - - 10 t d(off) turn-off delay time - - 20 t f fall time - - 13 v sd diode forward voltage drop - - -1.8 v v gs = 0v, i sd = -100ma t rr reverse recovery time - 300 - ns v gs = 0v, i sd = -100ma notes: all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) all a.c. parameters sample tested. 1. 2.
3 tp2535 supertex inc . 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves
4 tp2535 supertex inc . 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves (cont.) gate drive dynamic characteristics q ( nanocoulombs ) g v s g ) s t l o v ( t j ) h t ( s g v ) d e z i l a m r o n ( ) n o ( s d r ) d e z i l a m r o n ( v ds (th ) an d r variation with temperatur e c) ( on-resistance vs. drain current (amperes ) d ) s m h o ( ) n o ( s d r variation with temperature dss s s d ) d e z i l a m r o n ( v b c) ( t j transfer characteristics v gs (volts) i ) s e r e p m a ( d capacitance vs. drain-to-source voltage 200 ) s d a r a f o c i p ( c v ds (volts) i bv 0 - 10 -2 0 - 30 -40 150 100 0 0 - 2 - 4 - 6 - 8 -10 -2 -1.6 -1.2 -0.8 -0.4 0 -5 0 0 50 100 150 1.1 1.0 10 0 80 60 40 20 0 1. 2 1. 1 1. 0 0. 9 0. 8 -1 0 -8 -6 -4 -2 0 0 .4 0. 8 1. 2 1.6 2. 0 -5 0 0 50 100 150 60pf v ds = - 40 v v ds = - 10 v v gs = -4.5 v v gs = -10v t = -55 c a v ds = - 25v 125 c 0 - 0. 4 - 0. 8 - 1.2 - 2. 0 -1.6 f = 1mhz c iss c oss 0.9 190 pf 2. 5 2. 0 1. 5 1. 0 0. 5 0 (th ) v @ -1ma 25 c 50 0 c rss r ds(on) @ -10v, -0.1a
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate product liability indemnification insurance agreement. supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry an d specifications are subject to change without notice. for the latest product specifications refer to the supertex inc . (website: http//ww w. supertex.com ) ?2010 supertex inc. all rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 te l: 408-222-8888 www .supertex.com 5 tp2535 (the package drawing(s) in this data sheet may not re?ect the most current speci?cations. for the latest package outline information go to http://www.supertex.com/packaging.htm l .) doc.# dsfp-tp2535 a052109 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not speci?ed in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a
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